MMBT3904 200 ma, 40 v npn plastic encapsulated transistor elektronische bauelemente 30-aug-2010 rev. c page 1 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view a l c b d g h j f k e 1 2 3 1 2 3 ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen and lead free features ? collector curr ent capability i c =200ma ? collector-emitter voltage v ceo =40v. application ? general switching and amplification. packaging dimension marking absolute maximum ratings (t a = 25c unless otherwise noted) parameter symbol ratings unit collector - emitter voltage v ceo 40 vdc collector - base voltage v cbo 60 vdc emitter - base voltage v ebo 6.0 vdc collector current - continuous i c 200 madc total device dissipation fr-5 board (1) , t a =25c p d 225 mw total device dissipation fr-5 board, derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c / w total device dissipation alumina substrate (2) , t a =25c p d 300 mw total device dissipation alumina subs trate, derate above 25c 2.4 mw/c thermal resistance, junction to ambien r ja 417 c / w junction, storage temperature t j , t stg -55 ~ +150 c sot-23 ref. millimeter ref. millimeter min. max. min. max. a 2.80 3.00 g 0.10 ref. b 2.25 2.55 h 0.55 ref. c 1.20 1.40 j 0.08 0.15 d 0.90 1.15 k 0.5 ref. e 1.80 2.00 l 0.95 typ. f 0.30 0.50
MMBT3904 200 ma, 40 v npn plastic encapsulated transistor elektronische bauelemente 30-aug-2010 rev. c page 2 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25c unless otherwise noted)(continued) parameter symbol min. max. unit test conditions off characteristics collector-emitter breakdown voltage (3) v (br)ceo 40 - vdc i c = 1madc, i b =0 collector-base breakdown voltage v (br)cbo 60 - vdc i c = 10 adc, i e = 0 emitter-base breakdown voltage v (br)ebo 6.0 - vdc i e = 10 adc, i c =0 base cut-off current i bl - 50 nadc v ce = 30vdc, v eb = 3.0vdc collector cut-off current i cex - 50 nadc v ce = 30vdc, v eb = 3.0vdc on characteristics (3) dc current gain h fe(1) 40 - i c = 0.1madc, v ce = 1vdc h fe(2) 70 - i c = 1.0madc, v ce = 1vdc h fe(3) 100 300 i c = 10madc, v ce = 1vdc h fe(4) 60 - i c = 50madc, v ce = 1vdc h fe(5) 30 - i c = 100madc, v ce = 1vdc collector-emitter saturation voltage (3) v ce(sat) - 0.2 vdc i c = 10madc, i b =1madc - 0.3 i c = 50madc, i b = 5madc base-emitter saturation voltage (3) v be(sat) 0.65 0.85 vdc i c = 10madc, i b =1madc - 0.95 i c = 50madc, i b =5madc small-signal characteristics current-gain-bandwidth product f t 300 - mhz i c = 10madc, v ce = 20vdc, f=100mhz output capacitance c obo - 4.0 pf v cb =5.0vdc, i e =0, f=1.0mhz input capacitance c ibo - 8.0 pf v eb = 0.5vdc, i c =0, f=1.0mhz input impedance h ie 1.0 10 k ? v ce = 10 vdc, i c = 1.0madc, f=1.0khz voltage feedback radio h re 0.5 8.0 x 10 -4 v ce = 10 vdc, i c = 1.0madc, f=1.0khz small-signal current gain h fe 100 400 v ce = 10 vdc, i c = 1.0madc, f=1.0khz output admittance h oe 1.0 40 mhos v ce = 10 vdc, i c = 1.0madc, f=-1.0khz noise figure nf - 5.0 db v ce = 5.0 vdc, i c = 100 adc, r s =1.0k ? , f=1.0khz switching characteristics delay time td - 35 ns v cc =3vdc,v be =-0.5vdc i c =10madc, i b1 =1madc rise time tr - 35 storage time ts - 200 v cc =3vdc, i c =10madc,i b1 = i b2 =1madc fall time tf - 50 note: 1. fr-5=1.0 x 0.75 x 0.062 in. 2. alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width Q 300 s, duty cycle Q 2.0%
MMBT3904 200 ma, 40 v npn plastic encapsulated transistor elektronische bauelemente 30-aug-2010 rev. c page 3 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually.
MMBT3904 200 ma, 40 v npn plastic encapsulated transistor elektronische bauelemente 30-aug-2010 rev. c page 4 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. typical transient characteristic curves
MMBT3904 200 ma, 40 v npn plastic encapsulated transistor elektronische bauelemente 30-aug-2010 rev. c page 5 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually.
MMBT3904 200 ma, 40 v npn plastic encapsulated transistor elektronische bauelemente 30-aug-2010 rev. c page 6 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually.
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